| Specifications | Manufacturing Limits |
| Processing Workcrafts | Ion Beam Polishing(IBF) |
| Diameter | ≤1300mm (± 0.010mm) |
| Length | ≤1300mm (± 0.010mm) |
| Width | ≤1300mm (± 0.010mm) |
| Thickness | ≤300mm (± 0.01mm) |
| IBF Accuracy | R MS≤5nm |
| P ositioning Accuracy | ± 0.02mm |
| Repositioning Accuracy | ± 0.01mm |
| Movement Controlling Method | 3 -axis linkage |
| X Y Stroke Size | 0 -1300mm |
| Z -axis Stroke Size | 0 -300mm |
| A -axis Rotary Angle | A≥60° |
| Ion Source | German RF ion source |
| Maximum Beam Voltage | 2 000V |
| M aximum Beam Currency | 1000mA |
| Elimination Function | Gaussian type, stability ≥ 95% |
| Working Vacuum | 5 × 10-3pa |
| Working Vacuum Establishment Time | ≤1.5 hours |
| Secondary Chamber Vacuum Build-up Time | ≤30 min |
| Materials For Processing |
Fused silica / fused quartz/Silicon/CaF2/BaF2/ZnS/ZnSe
Optical glass, silicon, infrared materials, YAG, sapphire |
| Processing Shapes | Planar, spherical, aspheric, ultrathin, cylindrical, off-axis, free-form surface |